Atomic layer deposition and conversion

ABSTRACT

A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.

FIELD OF THE INVENTION

[0001] The present invention relates to deposition techniques and, moreparticularly, to deposition techniques for forming thin films on wafersor substrates and then converting the films into a different anothercomposition.

BACKGROUND OF THE INVENTION

[0002] Integrated circuits (IC) are often fabricated with one or moresemiconductor devices, which may include diodes, capacitors, anddifferent varieties of transistors. These devices are generallyfabricated by creating thin films of various materials, e.g. metals,semiconductors or insulators, upon a substrate or semiconductor wafer.Wafer and substrate are used interchangeably to refer to semiconductorstructures during processing, and may include other layers that havebeen fabricated thereon. The physical characteristics and tightlycontrolled placement of films on a substrate will define the performanceof the semiconductor device and its surrounding circuitry. Manysemiconductor devices require a dielectric layer that must be reliable.Specifically, the dielectric layer must be essentially free from defectsthat cause shorting through the dielectric layer. Oxides and nitridesare used to form dielectric layers in semiconductor devices.

[0003] One process for forming metal oxide thin films on semiconductorwafers is chemical vapor deposition (“CVD”). CVD is used to form a thinfilm of a desired material from a reaction of vapor-phase chemicalscontaining the chemical constituents of the material. CVD processesoperate by confining one or more semiconductor wafers in a reactionchamber. The chamber is filled with one or more gases that surround thewafer. The gases for the deposition of metal oxides includes a metalprecursor and a reactant gas, e.g. water vapor, to be introduced intothe chamber at the same time. Energy is supplied within the chamber andparticularly to the reactant gases near the wafer surface. A typicalenergy is heat applied to the substrate. The energy activates thereactant gas chemistry to deposit a film from the gases onto the heatedsubstrate. Such chemical vapor deposition of a solid onto a surfaceinvolves a heterogeneous surface reaction of the gaseous species thatadsorb onto the surface. The rate of film growth and the quality of thefilm depend on the process conditions. Unfortunately, the metalprecursor and the reactant gas also react during the gas phase remotefrom the substrate. Such a gas phase reaction produces contaminantsand/or involve a significant quantity of precursor so that aninsufficient amount is available for deposition on the substrate. As aresult, the gas phase reaction may become dominant and the thin filmcoverage is poor. That is, pinholes may be formed in the resulting metaloxide layer. Moreover, using water (H₂O) gas as the reactant gas resultsin impurities, such as hydroxide (OH), remaining in the resulting metaloxide layer.

[0004] Semiconductor fabrication continues to advance, requiring finerdimensional tolerances and control. Modern integrated circuit design hasadvanced to the point where line width may be 0.25 microns or less. As aresult, repeatability and uniformity of processes and their results isbecoming increasingly important. Generally, it is desired to have thinfilms deposited on the wafer to save space. Yet reducing the thicknessof films can result in pinholes and in less mechanical strength.

[0005] Another development in the field of thin film technology forcoating substrates is atomic layer deposition (ALD). A description ofALD is set forth in U.S. Pat. No. 5,879,459, which is hereinincorporated by reference in its entirety. ALD operates by confining awafer in a reaction chamber at a typical temperature of less than 300degrees C. Precursor gas is pulsed into the chamber, wherein the pulsedprecursor forms a monolayer on the substrate by chemisorption. The lowtemperature limits the bonding of the precursor to chemisorption, thusonly a single layer, usually only one atom or molecule thick, is grownon the wafer. Each pulse is separated by a purge pulse which completelypurges all of the precursor gas from the chamber before the next pulseof precursor gas begins. Each injection of precursor gas provides a newsingle atomic layer on the previously deposited layers to form a layerof film. Obviously, this significantly increases the time it takes todepose a layer having adequate thickness on the substrate. As anumerical example, ALD has a typical deposition rate of about 100 Å/minand CVD has a typical deposition rate of about 1000 Å/min. For at leastthis reason, ALD has not met with widespread commercial acceptance.

[0006] In light of the foregoing, there is a need for fabrication ofthin films which are thinner and have a reduced number of defects.

SUMMARY OF THE INVENTION

[0007] The above mentioned problems with thin film fabricationtechniques are addressed by the present invention and will be understoodby reading and studying the following specification. Systems and methodsare provided for fabricating thin films on substrates. The fabricationtechnique of the present invention grows a thin film by atomic layerdeposition and then converts the film to produce a thin film having adifferent composition than the ALD deposited film. In an embodiment,each ALD thin film is converted before a subsequent ALD film isdeposited. In one embodiment of the invention, a metal film is depositedby ALD. The metal film is then oxidized to produce a metal oxide film.In an embodiment, the metal is aluminum. In an embodiment, the metal istitanium. In an embodiment, the metal is tantalum.

[0008] In an embodiment, the thin film formed by atomic layer depositionis converted from an essentially pure metal film to a compound film thatincludes the metal and at least one second element. In an embodiment,the second element is oxygen. In an embodiment, the compound film is anoxide. In an embodiment, the second element is nitrogen. In anembodiment, the compound film is a nitride. In an embodiment, the secondelement is boron. In an embodiment, the compound film is a boride. In anembodiment, the second element is carbon. In an embodiment, the compoundfilm is a carbide. In an embodiment, the second element is fluorine. Inan embodiment, the compound film is a fluoride.

[0009] In an embodiment, a laminate or compound layer having at leasttwo compounds in the layer is formed. The first element layer isdeposited by ALD. This layer is then converted to a compound. A secondelement layer is deposited by ALD. This layer is then converted to acompound. In an embodiment, both the first and second elements aredeposited by ALD and then both elements are converted. In an embodiment,one of the first element layer and second element layer is deposited byALD and not converted. If the one layer includes a compound, then it isdeposited by ALD in its compound form. The other of the first elementlayer and the second element layer is converted.

[0010] Additional embodiments of the invention include depositiondevices and systems for forming metal oxide films on substrates, andmachine readable media having fabrication instructions stored thereon,all according to the teachings of the present invention as describedherein.

[0011] These and other embodiments, aspects, advantages, and features ofthe present invention will be set forth in part in the description whichfollows, and in part will become apparent to those skilled in the art byreference to the following description of the invention and referenceddrawings or by practice of the invention. The aspects, advantages, andfeatures of the invention are realized and attained by means of theinstrumentalities, procedures, and combinations particularly pointed outin the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012]FIG. 1 is a flow chart of the deposition process of an embodimentof the invention.

[0013]FIG. 2A is a flowchart of the deposition process of an embodimentof the invention.

[0014]FIG. 2B is a time graph of a deposition process of the presentinvention.

[0015]FIG. 3 is a view of a thin film of the present invention as adielectric layer in a capacitor and as a gate layer in a transistor.

[0016]FIG. 4 is a view of a reactor for use with the process of thepresent invention.

[0017]FIG. 5 is a view of a reactor system for use with the process ofthe present invention.

[0018]FIG. 6 is a view of a memory system containing a semiconductordevice having a thin film according to the present invention.

[0019]FIG. 7 is a view of a wafer containing semiconductor dies, eachhaving a semiconductor device with a thin film of the present invention.

[0020]FIG. 8 is a block diagram of a circuit module that has asemiconductor device with a thin film of the present invention.

[0021]FIG. 9 is a block diagram of a memory module that has asemiconductor device with a thin film of the present invention.

[0022]FIG. 10 is a block diagram of an electronic system that has asemiconductor device with a thin film of the present invention.

[0023]FIG. 11 is a block diagram of a memory system that has asemiconductor device with a thin film of the present invention.

[0024]FIG. 12 is a block diagram of a computer system that has asemiconductor device with a thin film of the present invention.

DESCRIPTION OF THE EMBODIMENTS

[0025] In the following detailed description of the invention, referenceis made to the accompanying drawings which form a part hereof, and inwhich is shown, by way of illustration, specific embodiments in whichthe invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe present invention. The terms wafer and substrate used in thefollowing description include any structure having an exposed surfaceonto which a layer is deposited according to the present invention, forexample to form the integrated circuit (IC) structure. The termsubstrate is understood to include semiconductor wafers. The termsubstrate is also used to refer to semiconductor structures duringprocessing, and may include other layers that have been fabricatedthereupon. Both wafer and substrate include doped and undopedsemiconductors, epitaxial semiconductor layers supported by a basesemiconductor or insulator, as well as other semiconductor structureswell known to one skilled in the art. The term conductor is understoodto include semiconductors, and the term insulator is defined to includeany material that is less electrically conductive than the materialsreferred to as conductors. The following detailed description is,therefore, not to be taken in a limiting sense, and the scope of thepresent invention is defined only by the appended claims, along with thefull scope of equivalents to which such claims are entitled.

[0026] According to the teachings of the present invention, fabricationof films on substrates, devices and systems for such fabrication, mediacontaining instructions therefor, and integrated circuits producedaccording to the present invention are described.

[0027] The use, construction and fundamental operation of reactors fordeposition of films are understood by those of ordinary skill in the artof semiconductor fabrication. The present invention may be practiced ona variety of such reactors without undue experimentation. Furthermore,one of ordinary skill in the art will comprehend the necessarydetection, measurement, and control techniques in the art ofsemiconductor fabrication as well as the more inclusive art ofindustrial processing for producing films on substrates upon reading thedisclosure.

[0028] It will be understood that the terms “precursor” and “reactant”are used herein to differentiate between a chemical compound thatincludes a metal component to be deposited on a substrate and a gaswhich reacts with the compound to deposit the metal component on awafer. This nomenclature is used herein as a tool to clearly describethe invention as both the “precursor” and the “reactant” chemicallyreact with each other to form the desired film on the substrate.Accordingly, the term “precursor” is not intended to imply a timerelationship with the “reactant” unless explicitly described.

[0029] Applicant hereby incorporates by reference copending U.S. patentapplication Ser. No. 09/782,207, which is assigned to the assignee ofthe present application.

[0030]FIG. 1 depicts an atomic layer deposition (ALD) process accordingto the teachings of the present invention. A substrate is prepared toreceive a compound layer, step 15. This includes forming requiredlayers, trenches, oxides such as field oxides and other structures onthe base surface of a wafer. In an embodiment, the compound layer is ametal nitride. In an embodiment, the compound layer is a carbide. In anembodiment, the compound layer is a boride. In an embodiment, thecompound layer is a fluoride. When depositing a dielectric layer for acapacitor, a field insulator is formed on the wafer. The field insulatoris etched to form a trench. A bottom electrode layer is deposited in thetrench. Thereafter, the dielectric layer, e.g., metal oxide or metalnitride, is deposited on the bottom electrode layer according to theteachings of the present invention. After the dielectric is formed a topelectrode layer is deposited on the dielectric layer. The remainingstructure for the integrated circuit is then formed. When depositing agate oxide for a transistor, the source and drain are formed in thesubstrate. A gate insulator, e.g., metal oxide, layer is formed on thesubstrate intermediate the source and drain according to the teachingsof the present invention. Thereafter, the gate is formed on the gateinsulator. The remaining structure for the integrated circuit is thenformed. Step 17 is the first step in the ALD process. A first gas flowsinto a reaction chamber containing the substrate. The first gas isdeposited at the surface of the substrate. The first gas includes afirst element that forms part of the desired compound. In an embodiment,the first gas includes titanium. In an embodiment, the titanium is aTiCl₄ gas. In an embodiment, the first gas includes tantalum. In anembodiment, the tantalum is a TaCl₅ gas. In an embodiment, the first gasincludes aluminum. In an embodiment, the aluminum is a trimethylaluminum(TMA) gas. A second gas flows into the chamber containing the substrateand first gas, step 19. The second gas is deposited at the surface ofthe substrate. The second gas includes a reactant element that willreact with the first gas to deposit a first-element containing layer onthe substrate. In an embodiment, the second gas is activated hydrogen.In an embodiment, the second gas is not H₂O. The first and second gasesare reacted in an ALD reaction to form a monolayer of metal film, step21, in an embodiment. In this embodiment of ALD, the monolayer of metalfilm formed by the first and second gases is only about one molecule inthickness. The monolayer is an essentially pure layer of the firstelement. Essentially pure is defined as greater than 99% pure. In a moredesirable embodiment, essentially pure is greater than 99.9% pure, plusor minus about 0.1%. In an even more desirable embodiment, essentiallypure is greater than 99.99% pure, plus or minus 0.01%. In anotherembodiment of ALD, the first and second gases react to form a layer thatis greater than a monolayer. After the ALD layer is formed on thesubstrate, the ALD layer is exposed to a reacting gas, step 23. Thereacting gas converts the ALD layer containing the first element into acompound containing the first element and at least a second element fromthe reacting gas. In an embodiment, the reacting gas includes oxygen. Inan embodiment, the oxidizing gas is dioxide (O₂). In an embodiment, theoxidizing gas is ozone (O₃). In an embodiment, the oxidizing gas isnitrogen oxide (N₂O). In an embodiment, the oxidizing gas is activatedoxide (O*). When the metal monolayer is titanium, then the oxidizing gasconverts the titanium monolayer to ATiO₃, where A denotes Ba or Sr orboth. When the metal monolayer is tantalum, then the oxidizing gasconverts the tantalum monolayer to Ta₂O₅. When the metal monolayer isaluminum, then the oxidizing gas converts the aluminum monolayer toalumina (Al₂O₃). The process is repeated, step 25, until the desiredthickness of the final layer of the first and second elements is formed.The process returns to step 17 to begin forming another ALD layer ormonolayer of a first element, which is then converted, according to theteachings of the present invention. In an embodiment, the first elementis a metal and the second element is oxygen. After the final layer hasthe desired thickness, then additional integrated circuit fabricationprocesses are performed on the substrate as needed, step 27.

[0031]FIG. 1 also shows an embodiment of the present invention in brokenline. Steps 15, 17, 19 and 21 are the same as described above. Thisembodiment repeats the ALD steps 17, 19, 21 until the ALD layer has thefinal, desired thickness, step 31. Thereafter, the ALD deposited layeris converted, step 33. In an embodiment, converting includes reactingthe ALD layer with at least one second element to transform the ALDlayer (single element layer) into a compound layer (multiple elementlayer). In an embodiment, reacting is oxidizing. In an embodiment, thefirst element is a metal. The process then proceeds, if needed, to step27.

[0032]FIG. 2A shows an ALD process 200 according to the teachings of thepresent invention. ALD process 200, in the illustrated embodiment,begins by initiating an inert purge gas flow through a reactor (210).The purge gas maintains the chamber at a generally constant pressure. Inone embodiment of the present invention the purge gas flow is pulsed,for example only injecting purge gas between other gas pulses. Inanother embodiment, purge gas is not used at all, i.e. step 210 is notperformed.

[0033] The precursor gas containing a first element, e.g., metal, to bedeposited on the substrate now flows into the reaction chamber (212).The metals include, for example, titanium, tantalum, or aluminum. Themetals can also include alloys of these metals or other metal that oneof ordinary skill would deposit on a substrate. The precursor gas flowcontinues until a volume closely adjacent the surface of the substrateon which the metal will be deposited is saturated by the precursor gas(214). According to the teachings of the present invention, theprecursor gas saturates the topology of the substrate so that adequateprecursor material is adjacent the substrate surface by the precursorgas entering and filling the steps, trenches, and holes. One of ordinaryskill will understand the same upon reading the disclosure. Theprecursor gas flow, as well as purge gas flow if present, continuesuntil the required saturation occurs depending on the processingconditions dictated by the type of substrate and precursor gas, and thetopology of the substrate (216). A substrate having numerous or highaspect steps may require a longer precursor gas flow period than asubstrate which has few steps or relative low aspect steps

[0034] Precursor gas flow ends once the precursor gas saturates adjacentthe substrate according to the processing conditions of the presentdeposition (218). After or substantially at the same time precursor gasflow is stopped, reactant gas flow (for example, activated hydrogen)begins in the reaction chamber (220). Reactant gas continues to flowinto the reaction chamber until the reactant gas saturates the volumeadjacent the surface of the substrate on which the substance in theprecursor gas will be deposited (222). The precursor gas and thereactant gas chemically react and deposit the desired material in a ALDlayer, e.g., monolayer, on the substrate. In an embodiment, thedeposited monolayer is about one atomic layer thick. In an embodiment,the deposited ALD layer is more than one atomic layer thick. Themonolayer and the ALD layer are an essentially pure layer of a singleelement.

[0035] The present process may continue the purge gas flow while thereactant gas flows into the reaction chamber (224). Once a sufficientquantity of reaction gas is present to complete the reaction with theprecursor to deposit a layer on the substrate, reaction gas flow ends(226). Purge gas flow may continue to partially flush the residualreaction and precursor gases and the by-product gas of the precursor andreactant reaction from the reaction chamber. A converting gas flows intothe reaction chamber (228). The converting gas includes an oxidizinggas. The oxidizing gas oxidizes the monolayer, which is a metal, to forma dielectric layer. The oxidation continues until sufficient time haselapsed to oxidize essentially all of the metal monolayer (230). If themonolayer is not sufficiently oxidized the process continues flowing theoxidizing gas to the metal monolayer. Once the monolayer is sufficientlyconverted, e.g., oxidized, then the process proceeds to step 232. Atstep 232, it is determined if the converted layer formed by the previoussteps has the desired film thickness. If the converted formed by one ora plurality of the ALD and conversion steps of the present invention hasthe desired thickness, then the ALD and conversion process of thepresent invention ends. If purge gas is still flowing, then the purgegas flow ends (234) usually after the remnants of the precursor,reactant, and by-product gases are purged from the chamber. The processof the present invention terminates at box 236. The reader should notethat process termination may comprise initiation of further processingand does not necessarily require shutdown of the reactor, e.g. the abovesequence of steps can be repeated or additional fabrication steps areperformed. While one embodiment of the invention includes all of theabove steps, the present invention includes other embodiments which donot include all of the above steps.

[0036] If the desired thickness of the layer has not been achieved(222), then the process returns to step 210 or step 212 and beginsanother cycle. The process then reiterates the above sequence/processuntil step 232 determines that the converted layer has the desiredthickness.

[0037] One embodiment of the present inventive process is shown in FIG.2B. The process begins with the flow of an inert purge gas and aprecursor gas containing the first element into the reaction chamber.The precursor gas flows into the chamber until a sufficient quantity ofthe element that will form the monolayer is adjacent the substrate asdetermined by stoichiometry of the particular reaction needed to depositthe desired film on the substrate. The precursor must include a certainminimum amount of the first element to be deposited on a wafer and otherreactive components that assist in the depositing the first element onthe wafer. The precursor may flow into the reactor in a quantity greaterthan determined by the stoichiometry of the reaction. In thisembodiment, the precursor gas flow ends followed by a short period ofonly purge gas flow. The reactant gas flows into the chamber until asufficient quantity of reactant gas is available to react with theprecursor at the surface of the substrate to deposit the desired firstelement film. An embodiment of the reactant gas include activated H.Like the precursor gas flow, the reactant gas and its flow reaches orexceeds the quantity that is determined by the stoichiometry of theparticular reaction. Thereafter, the reactant gas flow stops. After thereactant gas flow stops, the converting gas flows into the reactionchamber. In an embodiment, the converting gas is an oxidizing gas andthe first element monolayer is a metal. Accordingly, the metal monolayeron the substrate is oxidized. Thereafter, the flow of converting gasstops. This process is repeated until a converted film of a desiredthickness is deposited on the substrate.

[0038] The converting gas includes an activated element that reacts withthe ALD deposited layer. In an embodiment, the converting gas includesan activated oxygen. In an embodiment, the converting gas includesactivated NH₃. In an embodiment, the converting gas includes activatedN₂O.

[0039] The amounts of the precursor gas, the reactant gas, or theconverting gas meets or exceeds the amount of material required by thestoichiometry of the particular reaction. That is, the amount ofprecursor, reactant, converting gas flow, in certain embodiments,provides excess mass in the reactor. The excess mass is provided toensure an adequate reaction at the surface of the wafer. In thisembodiment, the ratio of precursor, reactant, or converting componentsin the gas phase usually is different than the stoichiometry of thefilm.

[0040]FIG. 3 shows an integrated circuit 300 including a layer formedaccording to the teachings of the present invention. The layer is adielectric in a capacitor 302. The layer is a gate insulator in atransistor 304. It is within the scope of the present invention to formthe dielectric layer and gate insulator layer for both elements at thesame time. It is within the scope of the present invention to form thedielectric layer for the capacitor and the gate insulator layer for thetransistor at different times during fabrication. Capacitor 302 isformed on substrate 305. In an embodiment, a trench 307 is formed ininsulator layer 309. A bottom electrode layer 311 is formed in thetrench 307. A dielectric layer 313 is formed, according to the teachingsof the present invention, on the bottom electrode layer 311. A topelectrode layer 315 is formed on the dielectric layer 313. Thetransistor 304 is also formed on substrate 305. A field oxide 321 isformed on the substrate 305. The source and drain regions 323 and 325are doped into the substrate 305. A gate insulator, e.g. an oxide or anitride, layer 327 is formed according to the teachings of the presentinvention on the substrate 305 intermediate the source and drain regions323 and 325. A gate 329 is formed on the gate insulator layer 327.

[0041] Dielectric layer or gate insulator layer 313 or 327 is a metaloxide material having a composition that includes the form MOx. In oneembodiment, the metal component M is a refractory metal. In anembodiment, the refractory metal is tantalum (Ta). In an embodiment, therefractory metal is titanium (Ti). In an embodiment, the refractorymetal is tungsten (W). The refractory metals of chromium (Cr), cobalt(Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V) andzirconium (Zr) are included in some embodiments. Benefits may be derivedby matching the metal oxide layer to the adjacent metal-containingelectrode. For example, the TaOx layer 313 or 327 can be grown on atantalum containing bottom electrode layer.

[0042]FIG. 4 depicts one embodiment of an atomic layer deposition (ALD)reactor 400 suitable for practicing the present invention. FIG. 4 isprovided for illustrative purposes and the invention may be practicedwith other reactors. The embodiment shown in FIG. 4 includes a chamber401 that is a pressure-sealed compartment for mounting a substrate 402on susceptor 407. Chamber 401 is typically manufactured from aluminumand is designed to contain a low-pressure environment around substrate402 as well as to contain process gases, exhaust gases, and heat orplasma energy within chamber 401. The illustrated substrate 402 includesa substrate base 402A on which are deposited first and second layers402B and 402C. Inlet gas manifold 403 supplies process gases, forexample precursor gases, reactant gases and converting gases, at acontrolled flow rates to substrate 402. A source of precursor gas 416 isconnected to manifold 403. A source of purge gas 417 is connected tomanifold 403. A source of reactant gas 418 is also connected to manifold403. A source of converting gas 419 is also connected to manifold 403.Carrier gases, such as helium, argon or nitrogen, may also be suppliedin conjunction with the gases supplied by the manifold as is known andunderstood by one of ordinary skill in the art. Chamber 401 alsoincorporates a pumping system (not shown) for exhausting spent gasesfrom chamber 401 through exhaust port 404.

[0043] ALD reactor 400 includes means for supplying energy to thereactable constituents or compounds in the process gases in chamber 401on the surface of the substrate 402. The supplied energy causes thereactable constituents to react or decompose and deposit a thin filmonto an upper surface of substrate 402. In one embodiment, the suppliedenergy includes thermal energy supplied by heat lamps 406. In theillustrated example, lamps 406 are positioned in the base of chamber401. Heat lamps 406 emit a significant amount of near-infra redradiation that passes through susceptor 407 to heat substrate 402.Alternatively, susceptor 407 is heated by heat lamps 406 and substrate402 is heated by conduction from susceptor 407. The heat lamps 406 maybe placed at alternate locations according to the parameters of thespecific deposition process being performed according to the presentinvention.

[0044] Another embodiment supplies reaction energy by a radio frequency(RF) generator 408 as shown in FIG. 4. RF generator 408 creates a RFfield between substrate 402 and an anode. In the embodiment shown inFIG. 4, susceptor 407 is grounded while the RF signal is applied to aprocess gas manifold 409. Alternative and equivalent ALD reactor designswill be understood by reading the disclosure. An RF anode may beprovided separately (not shown) and process gas manifold 409 may beelectrically isolated from the RF supply. For example, the RF signal isapplied to susceptor 407 and process gas manifold 409 is grounded.

[0045] In general, the energy sources 406 and 408 are intended toprovide sufficient reaction energy in a region near the surface ofsubstrate 402 to cause decomposition and/or reaction of the constituentsof the present gas to deposit the first element, e.g., the metalspecies, in the process gases onto a surface of the substrate. One ofordinary skill in the art will understand upon reading the disclosurethat any one, combination, or equivalent of the above can be employed toprovide the necessary reaction energy.

[0046] One embodiment includes plasma reactors because these allow filmdeposition at lower temperatures and are used in the semiconductorindustry. However, some reactant constituents in the process gases maydeposit at low temperatures using only thermal energy or other energysources. Hence, the invention encompasses reactor designs using anyenergy source including either thermal heating, RF plasma, or the like.

[0047] ALD reactor 400 is illustrated as a single wafer reactor, but itshould be understood that the invention is applicable to batch reactors.

[0048] Furthermore, ALD reactor 400 includes associated controlapparatus (not shown) for detecting, measuring and controlling processconditions within ALD reactor 400. Associated control apparatus include,as examples, temperature sensors, pressure transducers, flow meters andcontrol valves. Associated control apparatus further include otherdevices suitable for the detection, measurement and control of thevarious process conditions described herein.

[0049] One of ordinary skill in the art will comprehend other suitablereactors for practicing the invention described in this application, forexample the reactors described in U.S. Pat. Nos. 5,879,459 and6,305,314, herein incorporated by reference.

[0050]FIG. 5 represents an ALD system 500 suitable for practicing theinvention. ALD system 500 contains the ALD reactor 400 and a controlsystem 510. ALD reactor 400 and control system 510 are in communicationsuch that process information is passed from ALD reactor 400 to controlsystem 510 through communication line 520, and process controlinformation is passed from control system 510 to ALD reactor 400 throughcommunication line 530. It is noted that communication lines 520 and 530may represent only one physical line, in which communications arebidirectional.

[0051] The control system 510 includes, integrally or separabletherefrom, a machine readable media 535 which contains instructions forperforming the present invention. Media 535 may be an electrical,magnetic, optical, mechanical, etc. storage device that storesinstructions that are read by control system 510. Such storage devicesinclude magnetic disks and tape, optical disks, computer memory, etc.Control system 510 may also include a processor (not shown) for issuinginstructions to control reactor 400 based upon instructions read frommachine readable media 535.

[0052] Memory Devices

[0053]FIG. 6 is a simplified block diagram of a memory device 600according to one embodiment of the invention. The memory device 600includes an array of memory cells 602, address decoder 604, row accesscircuitry 606, column access circuitry 608, control circuitry 610, andInput/Output circuit 612. The memory is operably coupled to an externalmicroprocessor 614, or memory controller for memory accessing. Thememory device 600 receives control signals from the processor 614, suchas WE*, RAS* and CAS* signals. The memory device 600 stores data whichis accessed via I/O lines. It will be appreciated by those skilled inthe art that additional circuitry and control signals can be provided,and that the memory device of FIG. 6 has been simplified to help focuson the invention. At least one of the memory cells or associatedcircuitry has an integrated circuit structure or element in accordancewith the present invention, e.g., a metal oxide layer formed accordingto the present invention.

[0054] It will be understood that the above description of a memorydevice is intended to provide a general understanding of the memory andis not a complete description of all the elements and features of aspecific type of memory, such as DRAM (Dynamic Random Access Memory).Further, the invention is equally applicable to any size and type ofmemory circuit and is not intended to be limited to the DRAM describedabove. Other alternative types of devices include SRAM (Static RandomAccess Memory) or Flash memories. Additionally, the DRAM could be asynchronous DRAM commonly referred to as SGRAM (Synchronous GraphicsRandom Access Memory), SDRAM (Synchronous Dynamic Random Access Memory),SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well as Synchlinkor Rambus DRAMs and other emerging DRAM technologies.

[0055] Semiconductor Dies

[0056] With reference to FIG. 7, for one embodiment, a semiconductor die710 is produced from a wafer 700. A die 710 is an individual pattern,typically rectangular, on a substrate or wafer 700 that containscircuitry, or integrated circuit devices, to perform a specificfunction. A semiconductor wafer 700 will typically contain a repeatedpattern of such dies 710 containing the same functionality. Die 710contains circuitry for the inventive memory device, as discussed above.Die 710 may further contain additional circuitry to extend to suchcomplex devices as a monolithic processor with multiple functionality.Die 710 is typically packaged in a protective casing (not shown) withleads extending therefrom (not shown) providing access to the circuitryof the die for unilateral or bilateral communication and control. Eachdie 710 includes at least one ALD deposited and converted layer, e.g., ametal oxide, according to the present invention.

[0057] Circuit Modules

[0058] As shown in FIG. 8, two or more dies 710 maybe combined, with orwithout protective casing, into a circuit module 800 to enhance orextend the functionality of an individual die 710. Circuit module 800may be a combination of dies 710 representing a variety of functions, ora combination of dies 710 containing the same functionality. One or moredies 710 of circuit module 800 contain at least one ALD deposited andconverted layer, e.g., a metal oxide, in accordance with the presentinvention.

[0059] Some examples of a circuit module include memory modules, devicedrivers, power modules, communication modems, processor modules andapplication-specific modules, and may include multilayer, multichipmodules. Circuit module 800 may be a subcomponent of a variety ofelectronic systems, such as a clock, a television, a cell phone, apersonal computer, an automobile, an industrial control system, anaircraft and others. Circuit module 800 will have a variety of leads 810extending therefrom and coupled to the dies 710 providing unilateral orbilateral communication and control.

[0060]FIG. 9 shows one embodiment of a circuit module as memory module900. Memory module 900 contains multiple memory devices 910 contained onsupport 915, the number generally depending upon the desired bus widthand the desire for parity. Memory module 900 accepts a command signalfrom an external controller (not shown) on a command link 920 andprovides for data input and data output on data links 930. The commandlink 920 and data links 930 are connected to leads 940 extending fromthe support 915. Leads 940 are shown for conceptual purposes and are notlimited to the positions shown in FIG. 9. At least one of the memorydevices 910 contains a ALD deposited and converted layer, e.g., a metaloxide, according to the present invention.

[0061] Electronic Systems

[0062]FIG. 10 shows one embodiment of an electronic system 1000containing one or more circuit modules 800. Electronic system 1000generally contains a user interface 1010. User interface 1010 provides auser of the electronic system 1000 with some form of control orobservation of the results of the electronic system 1000. Some examplesof user interface 1010 include the keyboard, pointing device, monitor orprinter of a personal computer; the tuning dial, display or speakers ofa radio; the ignition switch, gauges or gas pedal of an automobile; andthe card reader, keypad, display or currency dispenser of an automatedteller machine, or other human-machine interfaces. User interface 1010may further describe access ports provided to electronic system 1000.Access ports are used to connect an electronic system to the moretangible user interface components previously exemplified. One or moreof the circuit modules 800 may be a processor providing some form ofmanipulation, control or direction of inputs from or outputs to userinterface 1010, or of other information either preprogrammed into, orotherwise provided to, electronic system 1000. As will be apparent fromthe lists of examples previously given, electronic system 1000 willoften be associated with certain mechanical components (not shown) inaddition to circuit modules 800 and user interface 1010. It will beappreciated that the one or more circuit modules 800 in electronicsystem 1000 can be replaced by a single integrated circuit. Furthermore,electronic system 1000 may be a subcomponent of a larger electronicsystem. It will also be appreciated that at least one of the memorymodules 800 contains a ALD deposited and converted layer, e.g., a metaloxide, according to the present invention.

[0063]FIG. 11 shows one embodiment of an electronic system as memorysystem 1100. Memory system 1100 contains one or more memory modules 900and a memory controller 1110. The memory modules 900 each contain one ormore memory devices 910. At least one of memory devices 910 contain ALDdeposited and converted layer, e.g., a metal oxide, according to thepresent invention. Memory controller 1110 provides and controls abidirectional interface between memory system 1100 and an externalsystem bus 1120. Memory system 1100 accepts a command signal from theexternal bus 1120 and relays it to the one or more memory modules 900 ona command link 1130. Memory system 1100 provides for data input and dataoutput between the one or more memory modules 900 and external systembus 1120 on data links 1140.

[0064]FIG. 12 shows a further embodiment of an electronic system as acomputer system 1200. Computer system 1200 contains a processor 1210 anda memory system 1100 housed in a computer unit 1205. Computer system1200 is but one example of an electronic system containing anotherelectronic system, i.e., memory system 900, as a subcomponent. Computersystem 1200 optionally contains user interface components. Depicted inFIG. 12 are a keyboard 1220, a pointing device 1230, a monitor 1240, aprinter 1250 and a bulk storage device 1260. It will be appreciated thatother components are often associated with computer system 1200 such asmodems, device driver cards, additional storage devices, etc. It willfurther be appreciated that the processor 1210 and memory system 1100 ofcomputer system 1200 can be incorporated on a single integrated circuit.Such single package processing units reduce the communication timebetween the processor and the memory circuit. It will be appreciatedthat at least one of the processor 1210 and memory system 1100 containsa ALD deposited and converted layer, e.g., a metal oxide, according tothe present invention.

[0065] While the above described embodiments describe first injectingthe precursor gas and then injecting the reactant gas, it will beunderstood that it is within the scope of the present invention to firstinject the reactant gas such that it saturates the volume adjacent thesubstrate and then inject the precursor. The precursor will enter thevolume and react with the already present reactant gas and form a filmon the substrate. The thus formed film is then converted according tothe teachings of the present invention.

[0066] The above description described forming compounds, such as metaloxides, by ALD depositing a first monolayer, e.g., metal layer, on asubstrate and/or a prior layer and then converting, e.g., oxidizing themetal layer to form a metal oxide. The present invention is alsoapplicable to forming other elemental layers in an integrated circuit.For example, a layer is deposited using ALD and then the layer isnitrided. Thus, the layer is now a nitride layer. The process isrepeated until the nitride layer has the desired thickness.

[0067] In another embodiment of the present invention, the layer issubjected to boron and thus becomes a boride layer. The above describedsteps are performed with the boron replacing the oxygen.

[0068] In another embodiment of the present invention, the layer issubjected to carbon and thus becomes a carbide layer. The abovedescribed steps are performed with the carbon replacing the oxygen.

[0069] In another embodiment of the present invention, the layer issubjected to fluorine and thus becomes a fluoride layer. The abovedescribed steps are performed with the fluorine replacing the oxygen.

[0070] In another embodiment of the present invention, the layer issubjected to phosphorus and thus becomes a phosphide layer. The abovedescribed steps are performed with the phosphorus replacing the oxygen.

[0071] The above description sets forth embodiments of the presentinvention that atomic layer deposit a single element, then subject it toa further element to convert the single element layer to an oxide,carbide, nitride, boride, fluoride, or phosphide two element layer.Embodiments of the present invention further provide for multipleelement layer to be oxided or subjected to other elements for conversionas described herein. Accordingly, the present invention produces mixedphase films. In an embodiment, the mixed phase films include more thanone base element. The first element is deposited using ALD in an ALDlayer, monolayer or atomic layer. It is then converted according to theteachings of the present invention. A second element is deposited usingALD in a monolayer or atomic layer. The second element layer is thenconverted according to the teachings of the present invention. In anembodiment, the first or second element is an alloy of a metal.Consequently, mixed element film is formed by sequentially depositingand converting the first element and the subsequent element(s). It willbe appreciated that the present method is adaptable to higher orders ofelements in the film, wherein a third element is deposited andconverted, . . . and an nth element is deposited and converted.

[0072] An example of such an ALD layer that is converted according tothe teachings of the present invention include, but are not limited to,titanium and silicon in the base film. One embodiment would be formed bydepositing both titanium and silicon by ALD then converting one or bothaccording to the teachings of the present invention to form TiO₂SiN_(x).Titanium is deposited in an ALD layer, such as a monolayer, using ALDand then converted according to the teachings herein. Silicon isdeposited and then converted either before or after the titanium.Accordingly, the film that is formed alternates depositing andconverting the titanium and the silicon.

[0073] An embodiment according to the teachings of the present inventionincludes depositing titanium and silicon by ALD and then converting bothelements with oxygen to form TiO_(x)SiO_(x). The titanium is firstdeposited, then oxidized. The silicon is then deposited, then convertedusing oxygen. In a further embodiment, the titanium and silicon are bothdeposited by ALD, then both converted by oxidizing the titanium andsilicon. In a further embodiment, either the TiO_(x) or SiO_(x) isdeposited according to ALD and the other of the TiO_(x) or SiO_(x) isdeposited by ALD and then converted according to the teachings of thepresent invention.

[0074] An embodiment according to the teachings of the present inventionincludes depositing titanium by ALD and then converting the titaniumusing both oxygen and nitrogen to form a TiO_(x)TiN layer. In a furtherembodiment, either the TiO_(x) or TiN is deposited according to ALD andthe other of the TiO_(x) or TiN is deposited by ALD and then convertedaccording to the teachings of the present invention.

[0075] An embodiment according to the teachings of the present inventionincludes depositing silicon by ALD and then converting the silicon usingboth oxygen and nitrogen to form a SiO_(x)SiN layer. In a furtherembodiment, either the SiN or SiO_(x) is deposited according to ALD andthe other of the SiN or SiO_(x) is deposited by ALD and then convertedaccording to the teachings of the present invention.

[0076] An embodiment according to the teachings of the present inventionincludes depositing tantalum and silicon by ALD and converting tantalumwith nitrogen to form TaNSi. The tantalum is deposited, then convertedwith nitrogen. The silicon is deposited by ALD. In a further embodiment,the present invention forms TaNTaSi.

[0077] An embodiment according to the teachings of the present inventionincludes depositing aluminum and titanium by ALD and then convertingboth elements with oxygen to form AlO₃TiO₂. The titanium is firstdeposited, then oxidized. The aluminum is then deposited, then convertedusing oxygen. In a further embodiment, the titanium and aluminum areboth deposited by ALD, then both converted by oxidizing the titanium andaluminum. In a further embodiment, either the TiO₂ or AlO₃ is depositedaccording to ALD and the other of the TiO₂ or AlO₃ is deposited by ALDand then converted according to the teachings of the present invention.

[0078] The present invention includes methods of forming alloys or mixedelement films and converting the alloy or mixed element films accordingto the teachings of the present invention. Some of the above embodimentdescribe specific elements that are deposited and converted or depositedin combination with elements that are converted according to theteachings of the present invention. It will be recognized that the orderand methods described in conjunction with these specific elements areadaptable to other elements that are used to form layers in integratedcircuits.

CONCLUSION

[0079] Thus, the present invention provides novel structures and methodsfor fabrication of thin films on substrates. The novel fabricationmethod of the present invention forms a first layer of a single elementby ALD and then converts the first layer to a second layer having twoconstituent elements. The first layer is formed by atomic layerdeposition and then converted. In an embodiment, each first layerproduced during an atomic layer deposition is converted before asubsequent first layer is deposited on the prior converted sub-layer. Inan embodiment, conversion is oxidation and the first layer is a metal.In an embodiment, each metal sub-layer produced during an atomic layerdeposition is oxidized before a subsequent metal sub-layer is depositedon the prior oxidized metal sub-layer. Accordingly, each sub-layer isformed at a molecular level by atomic layer deposition and thus has ahigh quality. Quality includes low impurity and low defects. Eachsub-layer is then oxidized. Accordingly, the oxidation is throughout thesub-layer and prevents nonoxidized areas in the sub-layer. The processis then repeated to until the oxidized sub-layers produce a film orlayer that has the desired thickness.

[0080] The present invention includes any other applications in whichthe above structures and fabrication methods are used. The scope of theinvention should be determined with reference to the appended claims,along with the full scope of equivalents to which such claims areentitled.

What is claimed is:
 1. A method of forming a thin film on a substrate,comprising: atomic layer depositing a first element as a thin film onthe substrate; and reacting the first element thin film to form acompound thin film including the first element.
 2. The method accordingto claim 1, wherein atomic layer depositing includes: flowing a firstelement-containing gas into a reaction chamber containing the substrate;flowing a second gas into the reaction chamber; and reacting the firstgas with the second gas adjacent the substrate to deposit the thin layeron the substrate.
 3. The method according to claim 1, wherein atomiclayer depositing includes: flowing a first element-containing gas into areaction chamber containing the substrate; and chemisorping the firstelement onto the substrate to form an atomic layer.
 4. The method ofclaim 3, wherein the atomic layer depositing steps are repeated untilthe metal layer has a desired thickness.
 5. A method of forming a metaloxide film on a substrate, comprising: atomic layer depositing a metalon the substrate; and oxidizing the deposited metal to form a metaloxide.
 6. The method according to claim 5, wherein atomic layerdepositing includes: flowing a first, metal-containing gas into areaction chamber containing the substrate; flowing a second gas into thereaction chamber; and reacting the first gas with the second gasadjacent the substrate to deposit a metal layer on the substrate.
 7. Themethod of claim 6, further comprising flowing an inert purge gas intothe chamber in between flowing the first gas and the second gas.
 8. Themethod of claim 5, wherein atomic layer depositing includes: flowing ametal-containing gas into a reaction chamber containing the substrate;and chemisorping the metal onto the substrate to form a metal atomiclayer.
 9. The method of claim 8, wherein the atomic layer depositingsteps are repeated until the metal layer has a desired thickness. 10.The method of claim 8, wherein flowing the first gas includes flowing agas containing titanium into the reaction chamber.
 11. The method ofclaim 8, wherein flowing the first gas includes flowing a gas containingtantalum into the reaction chamber.
 12. The method of claim 8, whereinflowing the first gas includes flowing a gas containing aluminum intothe reaction chamber.
 13. The method of claim 5, wherein the processsteps are performed in the listed order.
 14. A method of forming a metaloxide layer on a substrate, comprising: flowing a first,metal-containing gas into a reaction chamber containing the substrate;flowing a second, activated hydrogen gas into the reaction chamber;reacting the first gas with the second gas adjacent the substrate todeposit a metal layer on the substrate; and oxidizing the metal layer.15. The method of claim 14, wherein, if necessary, the process steps arerepeated in the recited order until the oxidized metal layer has adesired thickness.
 16. The method of claim 14, wherein the steps areperformed in the listed order.
 17. The method of claim 14, whereinflowing the first gas includes flowing a gas containing titanium intothe reaction chamber.
 18. The method of claim 14, wherein flowing thefirst gas includes flowing a gas containing tantalum into the reactionchamber.
 19. The method of claim 14, wherein flowing the first gasincludes flowing a gas containing aluminum into the reaction chamber.20. The method of claim 14, further comprising flowing an inert purgegas into the chamber in between flowing the precursor gas and thereactant gas.
 21. A method of forming an IC capacitor, comprising:forming a bottom electrode on a substrate; flowing a first gas into achamber containing the substrate; flowing a second gas into the chamber;reacting the first and second gases to form a monolayer of metal on thebottom electrode; oxidizing the monolayer of metal; and forming a topelectrode on the oxidized metal.
 22. The method of claim 21, whereinflowing the first gas includes flowing a gas containing titanium intothe chamber.
 23. The method of claim 21, wherein flowing the first gasincludes flowing a gas containing tantalum into the chamber.
 24. Themethod of claim 21, wherein flowing the first gas includes flowing a gascontaining aluminum into the chamber.
 25. The method of claim 21,wherein the process steps are performed in the listed order.
 26. Themethod of claim 21, wherein flowing the second gas includes flowingactivated hydrogen into the chamber
 27. A method of forming atransistor, comprising: forming a source region on a substrate; forminga drain region on the substrate; flowing a first gas into a chambercontaining the substrate; flowing a second gas into the chamber;reacting the first and second gases to form a monolayer of metal on thesubstrate; oxidizing the monolayer of metal to form a gate oxide; andforming gate on the gate oxide.
 28. The method of claim 27, whereinflowing the first gas includes flowing a gas containing titanium intothe chamber.
 29. The method of claim 27, wherein flowing the first gasincludes flowing a gas containing tantalum into the chamber.
 30. Themethod of claim 27, wherein flowing the first gas includes flowing a gascontaining aluminum into the chamber.
 31. The method of claim 27,wherein the process steps are performed in the listed order.
 32. Themethod of claim 27, wherein flowing the second gas includes flowingactivated hydrogen into the chamber.
 33. The method of claim 27, whereinone of the first gas and the second gas includes a metal component thatforms the metal monolayer.
 34. A method of forming a metal oxide layerin an IC, comprising: forming a first layer of precursor molecules bychemisorption on a top layer of a substrate; forming a second layer ofmolecules on the first layer; reacting the second layer with the firstlayer to form a metal layer; and oxidizing the metal layer.
 35. Themethod of claim 34, wherein forming the first layer includes flowing agas containing titanium into a chamber containing the substrate.
 36. Themethod of claim 34, wherein forming the first layer includes flowing agas containing tantalum into a chamber containing the substrate.
 37. Themethod of claim 34, wherein forming the first layer includes flowing agas containing aluminum into a chamber containing the substrate.
 38. Themethod of claim 34, wherein forming the second layer includes flowingactivated hydrogen into a chamber containing the substrate.
 39. Themethod of claim 34, wherein oxidizing includes flowing one of O₂, O₃,N₂O, and activated oxygen into a chamber containing the substrate.
 40. Amethod of forming an Al₂O₃ layer in an IC, comprising: flowingtrimethylaluminum onto a substrate; flowing activated hydrogen onto thetrimethylaluminum on the substrate; reacting the trimethylaluminum andthe activated hydrogen to form an aluminum layer on the substrate; andoxidizing the aluminum layer to form Al₂O₃ layer
 41. The method of claim40, wherein reacting includes purging by-product gas away from thesubstrate.
 42. The method of claim 41, wherein purging by-product gasincludes purging CH₄ away from the substrate.
 43. The method of claim41, wherein oxidizing includes flowing at least one of O₂, O₃, N₂O, andactivated oxygen onto the aluminum layer.
 44. A method of forming anTa₂O₅ layer in an IC, comprising: flowing TaCl₅ onto a substrate;flowing activated hydrogen onto the TaCl₅ on the substrate; reacting theTaCl₅ and the activated hydrogen to form a tantalum layer on thesubstrate; and oxidizing the tantalum layer to form a Ta₂O₅ layer. 45.The method of claim 44, wherein reacting includes purging by-product gasaway from the substrate.
 46. The method of claim 45, wherein purgingby-product gas includes purging HCl away from the substrate.
 47. Themethod of claim 45, wherein oxidizing includes flowing at least one ofO₂, O₃, N₂O, and activated oxygen onto the aluminum layer.
 48. A methodof forming an TiO_(x) layer in an IC, comprising: flowing TiCl₄ onto asubstrate; flowing activated hydrogen onto the TiCl₄ on the substrate;reacting the TiCl₄ and the activated hydrogen to form a titanium layeron the substrate; and oxidizing the titanium layer to form a TiO_(x)layer.
 49. The method of claim 48, wherein reacting includes purgingby-product gas away from the substrate.
 50. The method of claim 49,wherein purging by-product gas includes purging HCl away from thesubstrate.
 51. The method of claim 48, wherein oxidizing includesflowing at least one of O₂, O₃, N₂O, and activated oxygen onto thealuminum layer.
 52. A method of forming a nitride film in a IC,comprising: atomic layer depositing a first material on a substrate; andexposing the first material to a nitride to form a nitride layerincluding the first material.
 53. The method of claim 52, wherein atomiclayer depositing includes: flowing a first material-containing gas intoa reaction chamber containing the substrate; flowing a second gas intothe reaction chamber; and reacting the first gas with the second gasadjacent the substrate to deposit the first material on the substrate.54. The method of claim 53, wherein the first material is a metal. 55.The method of claim 54, wherein the metal is at least one of titanium,tungsten, and tantalum.
 56. A method of forming a boride film in a IC,comprising: atomic layer depositing a first material on a substrate; andexposing the first material to a boride to form a boride layer includingthe first material.
 57. The method of claim 56, wherein atomic layerdepositing includes: flowing a first material-containing gas into areaction chamber containing the substrate; flowing a second gas into thereaction chamber; and reacting the first gas with the second gasadjacent the substrate to deposit the first material on the substrate.58. The method of claim 57, wherein the first material includes a metal.59. A method of forming a carbide layer in a IC, comprising: atomiclayer depositing a first material on a substrate; and exposing the firstmaterial to a carbide to form a carbide layer including the firstmaterial.
 60. The method of claim 59, wherein atomic layer depositingincludes: flowing a first material-containing gas into a reactionchamber containing the substrate; flowing a second gas into the reactionchamber; and reacting the first gas with the second gas adjacent thesubstrate to deposit the first material on the substrate.
 61. The methodof claim 60, wherein the first material includes a metal.
 62. A methodof forming a fluoride film in a IC, comprising: atomic layer depositinga first material on a substrate; and exposing the first material to afluoride to form a fluoride layer including the first material.
 63. Themethod of claim 62, wherein atomic layer depositing includes: flowing afirst material-containing gas into a reaction chamber containing thesubstrate; flowing a second gas into the reaction chamber; and reactingthe first gas with the second gas adjacent the substrate to deposit thefirst material on the substrate.
 64. The method of claim 63, wherein thefirst material includes a metal.
 65. A method of forming a thin film ona substrate, comprising: atomic layer depositing a first element as athin film on the substrate; reacting the first element thin film to forma compound thin film including the first element; atomic layerdepositing a second element as a thin film on the compound film;reacting the second element thin film to form a further compound thinfilm including the second element.
 66. The method according to claim 65,wherein atomic layer depositing includes: flowing a firstelement-containing gas into a reaction chamber containing the substrate;flowing a second gas into the reaction chamber; and reacting the firstgas with the second gas adjacent the substrate to deposit the thin filmcontaining the first element on the substrate.
 67. The method accordingto claim 65, wherein atomic layer depositing includes: flowing a firstelement-containing gas into a reaction chamber containing the substrate;and chemisorping the first element onto the substrate to form an atomiclayer.
 68. The method of claim 67, wherein the atomic layer depositingsteps are repeated until thin layer has a desired thickness.
 69. Themethod of claim 65, wherein atomic layer depositing a first elementincludes depositing titanium.
 70. The method of claim 69, wherein atomiclayer depositing the second element includes deposing silicon.
 71. Themethod of claim 70, wherein reacting the first element thin filmincludes oxidizing the titanium to form titanium oxide.
 72. The methodof claim 71, wherein reacting the second element thin film includesoxidizing the silicon to form silicon oxide.
 73. The method of claim 71,wherein reacting the second element thin film includes nitridizing thesilicon to form silicon nitride.
 74. The method of claim 65, furthercomprising: atomic layer depositing the first element as a thin film onthe further compound film; reacting the first element thin film to forma compound thin film including the first element; atomic layerdepositing a second element as a thin film on the compound film;reacting the second element thin film to form a further compound thinfilm including the second element.
 75. The method of claim 74, whereinthe steps are repeated until the film that includes the reacted firstelement and the reacted second element has a desired thickness.
 76. Asemiconductor device, comprising: a substrate; and an atomic layerdeposition first layer deposited on the substrate, wherein the firstlayer is deposited sequentially pulsing a precursor gas and a reactantinto a reaction chamber, and wherein the precursor gas and reactantreact to deposit the first layer on the substrate, and wherein the firstlayer is converted to a second layer by a converting gas.
 77. Thesemiconductor device according to claim 76, wherein the first layer isan atomic layer deposition metal layer.
 78. The semiconductor deviceaccording to claim 77, wherein the second layer is a metal oxide. 79.The semiconductor device according to claim 78, wherein the first andsecond metal layers include at least one of titanium, tantalum andaluminum.
 80. A memory device in an integrated circuit, comprising: anmemory cell; and access circuit operably connected to the memory cell;and wherein at least one of the memory cell and the access circuitincludes: a substrate; and an atomic layer deposition first layerdeposited on the substrate, wherein the first layer is essentiallydevoid of contaminants, the first layer is deposited by sequentiallypulsing a precursor gas and a reactant into a reaction chamber, andwherein the precursor gas and reactant react predominately adjacent thesubstrate to deposit the first layer on the substrate, the first layerbeing part of the memory device, and wherein first layer is converted toa second layer by a converting gas.
 81. The memory device according toclaim 80, wherein the second layer is a gate oxide of a transistor inthe memory device.
 82. The memory device according to claim 80, whereinthe second layer is a dielectric in a capacitor in the memory device.83. A logic device in an integrated circuit, comprising: a logiccircuit; input/output circuit connected to the logic circuit; andwherein at least one of the logic circuit and the input/output circuitincludes: a substrate; and a first layer deposited on the substrate,wherein the first layer is essentially devoid of contaminants, the firstlayer is deposited by sequentially pulsing a precursor gas and areactant into a reaction chamber, and wherein the precursor gas andreactant react predominately adjacent the substrate to deposit the firstlayer on the substrate, the first layer being part of a logic device,and wherein the first layer is converted to a second layer by aconverting gas.
 84. The logic device according to claim 83, wherein thefirst layer is one of a gate oxide in a transistor in the logic device.85. The logic device according to claim 84, wherein the first layer isone of a dielectric in a capacitor of the logic device.
 86. Asemiconductor device, comprising: a substrate; a first layer of a filmdeposited on the substrate, wherein the first layer is deposited byinjecting a pulse of precursor gas into a chamber containing thesubstrate and injecting a pulse of reactant gas into the chamber,wherein the precursor and the reactant react to deposit the first layeron the substrate, wherein the first layer is converted to a second layerby a converting gas; and a third layer of the film deposited on thesecond layer of the film, wherein the second layer is deposited byinjecting a pulse of precursor gas into a chamber containing thesubstrate and injecting a pulse of reactant gas into the chamber,wherein the precursor and the reactant react to deposit the third layeron the second layer, wherein the third layer is converted to a fourthlayer by a converting gas, still further wherein the pulses of precursorgas and reactant gas are separate.
 87. The semiconductor deviceaccording to claim 86, wherein the second and fourth layers are the samematerial.
 88. The semiconductor device according to claim 87, whereinthe second and fourth layers are include a metal oxide.
 89. Thesemiconductor device according to claim 88, wherein the first and thirdlayers are ALD metal layers
 90. The semiconductor device according toclaim 86, wherein the pulse the precursor gas and the pulse of thereactant gas are separated by a time period, wherein the time periodallows the precursor gas to settle adjacent the surface of thesubstrate.
 91. A deposition device for forming films on substrates,comprising: a reaction chamber; a source of precursor gas; a source ofreactant gas; a source of converting gas; a mount for a substrate in thechamber; and a controller for sequentially pulsing the precursor gas,the reactant gas and converting gas into the chamber, the precursor gasbeing first pulsed into the chamber so that the precursor gas isadjacent a surface of the substrate, the reactant gas being pulsed intothe chamber to react with the precursor gas to deposit a film on thesurface of the substrate, and the converting gas being pulsed in thechamber to convert the film to a different chemical structure.
 92. Thedeposition device according to claim 91, wherein the controllerdiscretely pulses the precursor gas, the reactant gas, and theconverting gas into the chamber.
 93. The deposition device according toclaim 91, wherein the converting gas is an oxidizer, and the precursorgas includes a metal.
 94. A machine readable medium having instructionsstored thereon, comprising: first instructions for causing a depositionreactor to initiate depositing a film on a substrate by injecting apulse of precursor gas into a chamber containing the substrate; secondinstructions for causing the reactor to inject a pulse of reactant gasinto the chamber after the pulse of precursor gas has been injected intothe chamber; and third instructions for causing the reactor to inject aconverting gas into the chamber after the pulse of reactant gas had beeninjected into the chamber.
 95. The machine readable medium according toclaim 94, further comprising fourth instructions for causing the reactorto continue sequentially injecting pulses of precursor gas, reactant gasand converting gas until the deposited film has a select thickness. 96.The machine readable medium according to claim 94, wherein the firstinstructions for causing a reactor to initiate depositing a film furthercomprise instructions for ending the pulse of precursor gas prior toproceeding to the second instructions.
 97. The machine readable mediumaccording to claim 94, wherein the second instructions include a delayduring which neither the precursor gas nor the reactant gas are injectedinto the chamber.
 98. The machine readable medium according to claim 94,further comprising fourth instructions for holding the chamber at aconstant pressure.
 99. The machine readable medium according to claim94, wherein the first instructions cause the reactor to inject aprecursor gas having a metal constituent that will be deposited on thesubstrate.
 100. The machine readable medium according to claim 99,wherein the third instructions include instructions causing the reactorto inject an oxidizing gas that oxidizes the metal deposited on thesubstrate by atomic layer deposition.
 101. A IC film deposition system,comprising: a deposition reactor including a chamber storing asubstrate; a control system in communication with the reactor; and amachine readable medium in communication with the control system,wherein the machine readable medium has: first instructions for causingthe reactor to initiate depositing a film on the substrate by injectinga pulse of precursor gas into the chamber, second instructions forcausing the reactor to inject a pulse of reactant gas into the chamberafter the pulse of precursor gas is injected into the chamber to cause afilm to be deposited on the substrate, and third instructions forcausing the reactor to inject a pulse of converting gas into the chamberto convert the film.
 102. The system of claim 101, further comprisingfourth instructions for causing the reactor to continue sequentiallyinjecting pulses of precursor gas, reactant gas, and converting gasuntil the deposited film has a select thickness.
 103. The system ofclaim 102, wherein the third instructions include instructions to delayinjection of pulses of precursor gas until after the pulse of convertinggas ends.
 104. The system of claim 103, wherein the first instructionsinclude instructions to delay injection of pulses of precursor gas untilafter a time delay elapses after the end of the pulse of converting gas.105. The system of claim 104, wherein the second instructions includeinstructions to delay injection of pulses of reactant gas until after atime delay elapses after the end of the pulse of precursor gas.
 106. Thesystem of claim 102, wherein the control system is physically associatedwith the reactor.
 107. The system of claim 106, wherein the machinereadable medium is physically associated with the control system. 108.The system of claim 102, wherein the first instructions cause thereactor to inject a precursor gas having a metal constituent to bedeposited on the substrate.
 109. The system of claim 108, wherein thethird instructions cause the reactor to inject an oxidizing gas toconvert the metal on the substrate to a metal oxide layer.
 110. Areactor for forming films on substrates, comprising: a chamber; a firstgas source connected to the chamber; a second gas source connected tothe chamber; a third gas source connected to the chamber; a mount for asubstrate in the chamber; and a controller sequentially activating thefirst gas source and the second gas source such that the first gas is inthe chamber adjacent the substrate prior to injecting the second gasinto the chamber to form a film on the substrate based on an atomiclayer deposition the reaction of the first and second gases in thechamber, the controller subsequently activating the third gas source toconvert the film in to a different material.
 111. The reactor of claim110, wherein the third gas source supplies an oxidizing gas such thatthe film is converted to an oxide.
 112. The reactor of claim 111,wherein the first gas source supplies a metal that forms the film. 113.The reactor of claim 112, wherein the second gas source supplies aactivated hydrogen that removes a component of the first gas so that themetal remains to form the film.
 114. A semiconductor device, comprising:a substrate; an atomic layer deposition first layer deposited on thesubstrate, wherein the first layer is deposited sequentially pulsing afirst precursor gas and a first reactant into a reaction chamber, andwherein the first precursor gas and the first reactant react to depositthe first layer on the substrate, and wherein the first layer isconverted to a second layer by a first converting gas; and an atomiclayer deposition third layer deposited on the second layer, wherein thethird layer is deposited sequentially pulsing a second precursor gas anda second reactant into the reaction chamber, and wherein the secondprecursor gas and the second reactant react to deposit the third layeron the second layer, and wherein the third layer is converted to afourth layer by a second converting gas.
 115. The semiconductor deviceof claim 114, wherein an atomic layer deposition fifth layer depositedon the fourth layer, wherein the fifth layer is deposited sequentiallypulsing the first precursor gas and the first reactant into the reactionchamber, and wherein the first precursor gas and the first reactantreact to deposit the fifth layer on the fourth layer, and wherein thefifth layer is converted to a sixth layer by the first converting gas.116. The semiconductor device of claim 115, wherein a seventh layer isdeposited on the sixth layer and is the same as the fourth layer. 117.The semiconductor device of claim 116, wherein an eighth layer isdeposited on the seventh layer and is the same as the second layer. 118.The semiconductor device according to claim 114, wherein the first layeris an atomic layer deposition metal layer.
 119. The semiconductor deviceaccording to claim 118, wherein the second layer is a metal oxide. 120.The semiconductor device according to claim 119, wherein the first andsecond metal layers include at least one of titanium, tantalum andaluminum.